GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification
Materials, ISSN: 1996-1944, Vol: 16, Issue: 4
2023
- 8Citations
- 2Captures
- 2Mentions
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations8
- Citation Indexes8
- CrossRef7
- Captures2
- Readers2
- Mentions2
- Blog Mentions1
- Blog1
- News Mentions1
- News1
Most Recent News
Reports Outline Nanowires Study Findings from Changchun University of Science and Technology (GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification)
2023 MAR 02 (NewsRx) -- By a News Reporter-Staff News Editor at Nanotech Daily -- Investigators publish new report on nanowires. According to news reporting
Article Description
A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10 A to 1.26 × 10 A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W to 3.047 A∙W. The reasons for the improvement of the photodetectors’ performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.
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