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Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Micromachines, ISSN: 2072-666X, Vol: 13, Issue: 10
2022
  • 1
    Citations
  • 0
    Usage
  • 2
    Captures
  • 1
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    1
  • Captures
    2
  • Mentions
    1
    • Blog Mentions
      1
      • Blog
        1

Article Description

In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

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