Enhancing the relative sensitivity of V, V and V based luminescent thermometer by the optimization of the stoichiometry of YAlGaO nanocrystals
Nanomaterials, ISSN: 2079-4991, Vol: 9, Issue: 10
2019
- 34Citations
- 34Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations34
- Citation Indexes34
- 34
- CrossRef30
- Captures34
- Readers34
- 34
Article Description
In this work the influence of the Ga3+ concentration on the luminescent properties and the abilities of the YAlGaO: V nanocrystals to noncontact temperature sensing were investigated. It was shown that the increase of the Ga amount enables enhancement of V emission intensity in respect to the V and V and thus modify the color of emission. The introduction of Ga ions provides the appearance of the crystallographic sites, suitable for V occupation. Consequently, the increase of V amount facilitates V → V interionic energy transfer throughout the shortening of the distance between interacting ions. The opposite thermal dependence of V and V emission intensities enables to create the bandshape luminescent thermometr of the highest relative sensitivity of V-based luminescent thermometers reported up to date (Smax, 2.64%/°C, for YAlGaO at 0 °C). An approach of tuning the performance of YAlGaO: V nanocrystals to luminescent temperature sensing, including the spectral response, maximal relative sensitivity and usable temperature range, by the Ga doping was presented and discussed.
Bibliographic Details
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