Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
Photonics, ISSN: 2304-6732, Vol: 11, Issue: 11
2024
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Photonics, Vol. 11, Pages 1037: Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
Photonics, Vol. 11, Pages 1037: Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers Photonics doi: 10.3390/photonics11111037 Authors: Yuanlong Fan Jing Zhang K. Alan Shore It is
Article Description
It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.
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