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Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Sustainability (Switzerland), ISSN: 2071-1050, Vol: 16, Issue: 2
2024
  • 6
    Citations
  • 0
    Usage
  • 22
    Captures
  • 2
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    6
    • Citation Indexes
      6
  • Captures
    22
  • Mentions
    2
    • Blog Mentions
      1
      • Blog
        1
    • News Mentions
      1
      • 1

Most Recent News

Researcher from University Grenoble Alpes Describes Findings in Electronics [Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device]

2024 FEB 06 (NewsRx) -- By a News Reporter-Staff News Editor at Electronics Daily -- New research on electronics is the subject of a new

Article Description

Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. Finally, we compare this result with publicly available data for Si, GaN and SiC power devices.

Bibliographic Details

Laura Vauche; Gabin Guillemaud; Joao Carlos Lopes Barbosa; Léa Di Cioccio

MDPI AG

Computer Science; Social Sciences; Energy; Environmental Science

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