Performance improvement in reservoir computing by using HfZrO FeFETs through operating voltage optimization

We have investigated how the parameters of an input gate voltage (V ) waveform and a drain voltage (V ) impact the performance of reservoir computing (RC) using a HfZrO ferroelectric FET (FeFET). The RC performance is maximized by the high swing amplitude of the V and the most symmetrical polarization switching condition in the triangular-shaped input waveform, obtained by the center V of 0.5 V, because of the enhanced polarization switching of the FeFETs. Regarding the V dependence, the amount of the drain current and polarization switching have a trade-off relationship. As a result, a moderate V of 1.0 V becomes optimum in terms of the RC performance because a difference in drain current responses between different gate input patterns is maximized with this V . Furthermore, high computing capacities are achieved by combining the above optimal bias condition with drain current responses to both original and inverted gate input patterns.