Mechanism of photoresponsivity reduction in BaSi epitaxial films by post-annealing at moderate temperatures
Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 63, Issue: 2
2024
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Article Description
Photoresponsivity is an important measure for applications as light absorbing layers because it is proportional to carrier lifetime. Previous studies have shown that the photoresponsivity of undoped BaSi films increases by more than 10 times by post-annealing (PA) at 1000 °C, but decreases by moderate-temperature PA. Such BaSi films are compressively strained in the normal direction, regardless of whether they are undoped or As-doped BaSi films and show a distinct photoluminescence around 0.85 eV at 8 K, indicating the formation of a new localized state. These provide a clue to the annealing conditions that lead to photoresponsivity reduction.
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