Defect generation and recovery in high-k HfO/SiO/Si stack fabrication
Applied Physics Express, ISSN: 1882-0786, Vol: 16, Issue: 6
2023
- 7Citations
- 4Captures
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Article Description
The defect generation and recovery are studied in a high-k HfO/SiO/Si stack for MOSFETs, at each fabrication step. The stack is fabricated in a well-established manner, via chemical oxidation for a SiO interfacial layer and atomic layer deposition for a HfO layer, followed by post-deposition annealing (PDA), O plasma treatment, and forming gas annealing (FGA). Throughout the fabrication, the carrier lifetime is measured for monitoring the defects in the stack. The measurements indicate that the defects are generated by the HfO/SiO stack formation as well as PDA and O plasma treatment, whereas those defects are mostly recovered by FGA.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85163327556&origin=inward; http://dx.doi.org/10.35848/1882-0786/acdc82; https://iopscience.iop.org/article/10.35848/1882-0786/acdc82; https://dx.doi.org/10.35848/1882-0786/acdc82; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/?ssa=c12623ce-84e6-42f7-8a5e-55ba925a3ecc&ssb=53359226311&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.35848%2F1882-0786%2Facdc82&ssi=2cdd8b0a-8427-4cff-936f-da0fb72c2fc3&ssk=support@shieldsquare.com&ssm=42109322825382901231280882705487333&ssn=392d7394476da6bd4f4811275f0c59cdf25517c5ab98-6cb9-4002-9b9ac9&sso=f3091673-5afc0bb052477739fe2876b1277bcec5ca9feeea1f457354&ssp=45009641181718008656171834504649847&ssq=96097734128244603088399480775598456093715&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJfX3V6bWYiOiI3ZjYwMDAwZDMzMWM4YS1iODM3LTQ4MzEtYjhjNy01MGVmOGE2YTAyMjMxNzE4MDk5NDgwNzkxMjQxODAxMzk1LTEwNzUwYzQxYjdhYzQ5YjAyMzEyOCIsInJkIjoiaW9wLm9yZyIsInV6bXgiOiI3ZjkwMDAwMzkxMjc0Ny01NzFjLTRhMTEtYjUzZS00YWNmNDcwOWM2Y2I0LTE3MTgwOTk0ODA3OTEyNDE4MDEzOTUtOTY3NmVmYWFkZWVkOWI2NzIzMTI4In0=
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