PlumX Metrics
Embed PlumX Metrics

Defect generation and recovery in high-k HfO/SiO/Si stack fabrication

Applied Physics Express, ISSN: 1882-0786, Vol: 16, Issue: 6
2023
  • 7
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

Article Description

The defect generation and recovery are studied in a high-k HfO/SiO/Si stack for MOSFETs, at each fabrication step. The stack is fabricated in a well-established manner, via chemical oxidation for a SiO interfacial layer and atomic layer deposition for a HfO layer, followed by post-deposition annealing (PDA), O plasma treatment, and forming gas annealing (FGA). Throughout the fabrication, the carrier lifetime is measured for monitoring the defects in the stack. The measurements indicate that the defects are generated by the HfO/SiO stack formation as well as PDA and O plasma treatment, whereas those defects are mostly recovered by FGA.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know