Effect of InS buffer layer in TiO/InS/CulnS structure

The anodized TiO nanotube arrays (TNAs) have a benefit to provide large surfaces and straight electron transmitting routes to the electrode. However, it is difficult to fulfill with solid state electrolytes or photosensitive materials into the long TiO nanotubes. The substrate of Ti/wave-like TiO was prepared by peel-off the TNAs. The InS buffer layer between wave-like TiO and CuInS determines the photosensitivity of the Ti/wave-like TiO/InS/CuInS thin structure. The InS and CuInS are well-crystallized at 300C. The CuInS phase forms in InS layer due to Cu diffusion independent on the slight loss of sulfur. The CuInS direct deposition on Ti/wave-like TiO substrate can not exhibit photosensitivity. When CuInS deposited on InS to form Ti/wave-like TiO/InS/CuInS structure, the short-circuit current and the open-circuit voltage increase with the thickness increase of InS layer while illuminated by 50 mW/cm white light. © 2013 Trans Tech Publications, Switzerland.