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Transparent conducting SnO:Zn films prepared on sapphire by MOCVD

Advanced Materials Research, ISSN: 1022-6680, Vol: 79-82, Page: 771-774
2009
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Conference Paper Description

1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO :Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO :Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO:Zn films with the thickness 1-1.4μm was about 80% in visible region. The Hall mobility and carrier concentration of the SnO:Zn films varied with the Zn content increasing.

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