Characterisation of defects in ZnO implanted by hydrogen

In the present work, defects created by implantation of hydrothermally grown ZnO single crystals of high quality with H ions were investigated by positron annihilation lifetime (LT) spectroscopy combined with measurements of optical transmittance (OT) and photoluminescence (PL). First, zinc vacancies attached with one hydrogen impurity (V - 1H) atom were identified in the virgin ZnO single crystal. The ZnO single crystals were then bombarded by H ions with the energy of 2.5 MeV to the fluence of 10 cm. It was found that V - V divacancies were introduced into ZnO by H-implantation. Effects of H-implantation on the optical activity of defects in ZnO lattice are characterised in the light of the present OT and PL data.