MBE growth of 2.3μm InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers
Key Engineering Materials, ISSN: 1662-9795, Vol: 552, Page: 389-392
2013
- 2Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations2
- Citation Indexes2
- CrossRef1
Conference Paper Description
2.3 μm InGaAsSb/AlGaAsSb lasers with multiple quantum wells(MQWs) have been demonstrated.The growth temperature of quantum wells is 440°C and the growth quality of InGaAsSb/AlGaAsSb MQWs is examined by X-ray diffraction and Photoluminescence(PL) at room temperature.The energy band structure of MQWs was calculated by one-dimensional finite-difference method(1D-FDM) © (2013) Trans Tech Publications, Switzerland.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84880435028&origin=inward; http://dx.doi.org/10.4028/www.scientific.net/kem.552.389; https://www.scientific.net/KEM.552.389; https://www.scientific.net/KEM.552.389.pdf; http://www.scientific.net/KEM.552.389; http://www.scientific.net/KEM.552.389.pdf; https://dx.doi.org/10.4028/www.scientific.net/kem.552.389
Trans Tech Publications, Ltd.
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