Optimising the growth of few-layer graphene on silicon carbide by nickel silicidation
Materials Science Forum, ISSN: 1662-9752, Vol: 740-742, Page: 121-124
2013
- 1Citations
- 10Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Conference Paper Description
Few-layers graphene (FLG) films were grown by local solid phase epitaxy on a semi- insulating 6H-SiC substrate by annealing Ni films deposited on the Si- and C-terminated faces of the SiC. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. The impact of the annealing process on the FLG final quality was studied by monitoring the peak position and intensity ratios of the Raman spectra. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity. © (2013) Trans Tech Publications, Switzerland.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84874023929&origin=inward; http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.121; https://www.scientific.net/MSF.740-742.121; http://www.scientific.net/MSF.740-742.121; http://www.scientific.net/MSF.740-742.121.pdf; https://dx.doi.org/10.4028/www.scientific.net/msf.740-742.121
Trans Tech Publications, Ltd.
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know