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Signs of anisotropic magnetoresistance in CoMnGa Heusler alloy epitaxial thin films based on current direction

Applied Physics Express, ISSN: 1882-0786, Vol: 12, Issue: 10
2019
  • 20
    Citations
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  • 21
    Captures
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    20
    • Citation Indexes
      20
  • Captures
    21

Article Description

Anisotropic magnetoresistance (AMR) effects in Co(MnGa) epitaxial thin films were investigated in the temperature range of 5-300 K by changing the current (I) direction to the crystal axis and the Co content (x). The AMR ratios were mostly positive for I // CoMnGa[100] and negative for I // CoMnGa[110] and showed peak values at x = 49.7 at% for both current directions. AMR ratios calculated from s-d scattering theory, including crystal field effects with density of states information from first-principles calculations, well reproduced experimental features.

Bibliographic Details

Takashi Sato; Satoru Kosaka; Satoshi Kokado; Masahito Tsujikawa; Tomoyuki Ogawa; Masafumi Shirai; Masakiyo Tsunoda

IOP Publishing

Engineering; Physics and Astronomy

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