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Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

Applied Physics Express, ISSN: 1882-0786, Vol: 8, Issue: 2, Page: 022702-null
2015
  • 30
    Citations
  • 0
    Usage
  • 24
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    30
    • Citation Indexes
      30
  • Captures
    24

Article Description

We demonstrated lasing action and investigated the optical properties of (11¯01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (11¯01) InGaN MQW laser diodes on (001) Si.

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