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Ultraviolet photodetectors using transparent gate AlGaN/GaN high electron mobility transistor on silicon substrate

Japanese Journal of Applied Physics, ISSN: 0021-4922, Vol: 52, Issue: 1 PART2
2013
  • 32
    Citations
  • 0
    Usage
  • 24
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    32
    • Citation Indexes
      32
  • Captures
    24

Article Description

In this paper, UV photoconductivity of a transparent gate AlGaN/GaN high electron mobility transistor (HEMT) on a Si substrate is demonstrated. The transparent gate enables the HEMT to standby under pinch-off conditions for operation as a photodetector. Therefore, the device can overcome the drawback of high standby-current in conventional metal gate field-effect transistor (FET)-based photodetectors without sacrificing its high responsivity. A negative threshold-voltage shift of -0.25 V and a significant drain-current increase over two orders of magnitude were observed under UV-light irradiation condition from the surface-side. A high responsivity of 2.0 × 10 A/W at 360nm with a low leakage current of 3 × 10 A/mm was simultaneously achieved. These experimental results were in agreement with the models for generation of a photo carrier and its transportation in a heterostructure. © 2013 The Japan Society of Applied Physics.

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