Sensitization effect of Al co-doping on nd-related photoluminescence in TiO matrix
Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 53, Issue: 6 SPEC. ISSUE
2014
- 4Citations
- 3Captures
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Conference Paper Description
Nd and Al co-doped anatase phase TiO thin films were prepared on silicon substrates by laser ablation and post annealing. These thin films exhibited intense light emissions due to intra-4f shell transitions in the Nd3+ ions at room temperature. Furthermore, the intensity and line shape of the Nd-related luminescence were affected by the Al co-doping. The emission dynamics measurements showed that a slight Al co-doping led to an improvement of the Nd-emission lifetime. Our results indicated that Al is an effective sensitizer of enhancing Nd3+-related emission in the TiO matrix. © 2014 The Japan Society of Applied Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84903271335&origin=inward; http://dx.doi.org/10.7567/jjap.53.06jg06; http://stacks.iop.org/1347-4065/53/i=6S/a=06JG06?key=crossref.8d354c5ef00dbeb0e05c218ff3105c31; http://stacks.iop.org/1347-4065/53/i=6S/a=06JG06/pdf; https://iopscience.iop.org/article/10.7567/JJAP.53.06JG06
Japan Society of Applied Physics
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