Millimeter Wave Reflection Data for Semi-Insulating Gallium Nitride on Sapphire Wafer
2020
- 511Usage
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Usage511
- Views478
- Downloads33
Dataset Description
In order to estimate the dielectric properties of materials, we need vector measurements consisting of voltage reflection and transmission of electromagnetic radiation for the material under test (amplitude and phase). A recently developed apparatus for measuring time-resolved charge carrier dynamics in photo-responsive materials for millimeter-wave probe frequencies (TR-mmWC) was used to study dc reflection (amplitude only) characteristics of binary III/V direct bandgap material Gallium Nitride (GaN). Commercial-grade 2" N-GaN (Si-doped, high resistivity) on Sapphire wafer with thickness 430 +/- 25 micrometer and GaN layer thickness of 5 micrometers was used to collect reflected RF data using a Schottky barrier diode detector operable in the 110-170 GHz (D-waveguide band) range with responsivity around 2000 volts/watt. Output voltages of this negative polarity detector were collected in steps of 0.01 GHz. Reference voltages (E0) for reflection were collected by using a highly polis...
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