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Millimeter Wave Reflection Data for Semi-Insulating Gallium Nitride on Sapphire Wafer

2020
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In order to estimate the dielectric properties of materials, we need vector measurements consisting of voltage reflection and transmission of electromagnetic radiation for the material under test (amplitude and phase). A recently developed apparatus for measuring time-resolved charge carrier dynamics in photo-responsive materials for millimeter-wave probe frequencies (TR-mmWC) was used to study dc reflection (amplitude only) characteristics of binary III/V direct bandgap material Gallium Nitride (GaN). Commercial-grade 2" N-GaN (Si-doped, high resistivity) on Sapphire wafer with thickness 430 +/- 25 micrometer and GaN layer thickness of 5 micrometers was used to collect reflected RF data using a Schottky barrier diode detector operable in the 110-170 GHz (D-waveguide band) range with responsivity around 2000 volts/watt. Output voltages of this negative polarity detector were collected in steps of 0.01 GHz. Reference voltages (E0) for reflection were collected by using a highly polis...

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